MOCVD is a kind of chemical vapor deposition (CVD) technique which uses organic metal decomposition reaction to grow thin films. In order to grow multi-component, large area, thin layer and ultra-thin layer compound semiconductor materials, MOCVD equipment should not only consider the system tightness, flow rate, rapid component change, etc., the most important is the temperature control of the reactor chamber. The temperature control precision of MOCVD should reach 0.2℃ or higher. High temperature uniformity is also an important guarantee.

Tungsten, Molybdenum, Rhenium and other refractory metal materials have the advantages of high temperature resistance, low pollution, excellent creep resistance, high dimensional stability, low expansion coefficient, weldability, so they are widely used as filament, shielding, conductive plate and other parts of MOCVD.

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